[en] In this study, we report the segregation of magnesium in the grain boundaries of magnesium‐doped cuprous oxide (Cu2O:Mg) thin films as revealed by atom probe tomography and the consequences of the dopant presence on the temperature‐dependent Hall effect properties. The incorporation
of magnesium as a divalent cation was achieved by aerosol‐assisted metal organic chemical
vapour deposition, followed by thermal treatments under oxidizing conditions. We observe that,
in comparison with intrinsic cuprous oxide, the electronic transport is improved in Cu2O:Mg with a reduction of resistivity to 13.3 ± 0.1 Ω cm, despite the reduction of hole mobility in the doped films, due to higher grain‐boundary scattering. The Hall carrier concentration dependence with temperature showed the presence of an acceptor level associated with an ionization energy of 125 ± 9 meV, similar to the energy value of a large size impurity−vacancy complex. Atom probe tomography shows a magnesium incorporation of 5%, which is substantially present at the grain boundaries of the Cu2O.
Disciplines :
Physics
Author, co-author :
Resende, Joao; Université de Liège - ULiège > Département de Physique, CESAM / QMAT > SPIN
Nguyen, Van-Son; CEA > INES - LITEN
Fleischmann, Claudia; IMEC
Bottiglieri, Lorenzo; Grenoble INP > LMGP
Brochen, Stéphane; Grenoble INP > LMGP
Vandervorst, Wilfried; Katholieke Universiteit Leuven - KUL > IKS
Favre, Wilfried; CEA > INES - LITEN
Jimenez, Carmen; Grenoble INP > LMGP
Deschanvres, Jean-Luc; Grenoble INP > LMGP
Nguyen, Ngoc Duy ; Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Language :
English
Title :
Grain‐boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties
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