Eprint already available on another site (E-prints, working papers and research blog)
Opto-electronic properties and solar cell efficiency modelling of Cu2ZnXS4 (X=Sn,Ge,Si) kesterites
Ratz, Thomas; Raty, Jean-Yves; Brammertz, Guy et al.
2020
 

Files


Full Text
ARXIV_Opto-electronic properties and solar cell efficiency modelling of Cu2ZnXS4 (X=Sn,Ge,Si) kesterites.pdf
Author preprint (6.73 MB)
arXiv:2011.12764
Download
Annexes
Supplementary_Material.pdf
Publisher postprint (182.44 kB)
Download

All documents in ORBi are protected by a user license.

Send to



Details



Keywords :
Kesterite; Sn cation substitution; First principle calculations
Abstract :
[en] In this work, first principle calculations of Cu2 ZnSnS4 (CZTS), Cu2 ZnGeS4 (CZGS) and Cu2 ZnSiS4 (CZSS) are performed to highlight the impact of the cationic substitution on the structural, electronic and optical properties of kesterite compounds. Direct bandgaps are reported with values of 1.32, 1.89 and 3.06 eV respectively for CZTS, CZGS and CZSS. In addition, absorption coefficient values of the order of 10^4 cm^{−1} are obtained, indicating the applicability of these materials as absorber layer for solar cell applications. In the second part of this study, ab initio results (absorption coefficient, refractive index and reflectivity) are used as input data to model the electrical power conversion efficiency of kesterite-based solar cell. In that perspective, we used an improved version of the Shockley-Queisser theoretical model including non-radiative recombination via an external parameter defined as the internal quantum efficiency. Based on predicted optimal absorber layer thicknesses, the variation of the solar cell maximal efficiency is studied as a function of the non-radiative recombination rate. Maximal efficiencies of 25.88 %, 19.94 % and 3.11 % are reported respectively for Cu2ZnSnS4, Cu2ZnGeS4 and Cu2ZnSiS4 for vanishing non-radiative recombination rate. Using a realistic internal quantum efficiency which provides 𝑉OC values comparable to experimental measurements, solar cell efficiencies of 15.88, 14.98 and 2.66 % are reported respectively for Cu2ZnSnS4, Cu2ZnGeS4 and Cu2ZnSiS4 (for an optimal thickness of 1.15 𝜇m). With this methodology we confirm the suitability of Cu2ZnSnS4 in single junction solar cells, with a possible efficiency improvement of 10% enabled through the reduction of the non-radiative recombination rate. In addition, Cu2ZnGeS4 appears to be an interesting candidate as top cell absorber layer for tandem approaches whereas Cu2ZnSiS4 might be interesting for transparent photovoltaic windows.
Research center :
CESAM - Complex and Entangled Systems from Atoms to Materials - ULiège
Disciplines :
Physics
Author, co-author :
Ratz, Thomas  ;  Université de Liège - ULiège > Département de physique > Département de physique
Raty, Jean-Yves  ;  Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Brammertz, Guy;  IMEC division IMOMEC | partner in Solliance, Wetenschapspark 1, B-3590 Diepenbeek, Belgium
Vermang, Bart;  Institute for Material Research (IMO), Hasselt University, Agoralaan gebouw H, B-3590 Diepenbeek, Belgium
Nguyen, Ngoc Duy  ;  Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Language :
English
Title :
Opto-electronic properties and solar cell efficiency modelling of Cu2ZnXS4 (X=Sn,Ge,Si) kesterites
Publication date :
25 November 2020
Available on ORBi :
since 01 December 2020

Statistics


Number of views
68 (5 by ULiège)
Number of downloads
93 (1 by ULiège)

Bibliography


Similar publications



Contact ORBi