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Revisiting the role of strain engineering in NdNiO3 thin film from first-principles calculations
Zhang, Yajun; Mercy, Alain; Schmitt, Michaël et al.
201926TH INTERNATIONAL WORKSHOP ON OXIDE ELECTRONICS
 

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Keywords :
strain; metal-insulator transition; oxides
Abstract :
[en] Epitaxial strain engineering of the metal-insulator transition temperature (TMIT) in RNiO3 thin film attracts nowadays extensive attention. Various concrete examples have been reported but the precise mechanism behind the monitoring of TMIT remains elusive.1-6 Here, combining first-principles calculations and Landau theory analysis, we provide a general insight into the effect of epitaxial strain on the properties of NdNiO3 thin films and provide a complete and consistent description of the evolution of TMI under different strain conditions as observed in experiments. We clarify how the subtle interplay between substrate controlled oxygen octahedral rotations and pure lattice strain govern TMI through renormalization of the stiffness of the breathing distortion. Our findings not only improve the understanding of epitaxial strain engineering but also establish practical design rules to purposely and precisely tune TMIT.
Disciplines :
Physics
Author, co-author :
Zhang, Yajun ;  Université de Liège - ULiège > Département de physique > Physique théorique des matériaux
Mercy, Alain ;  Université de Liège - ULiège > Département de physique > Département de physique
Schmitt, Michaël ;  Université de Liège - ULiège > Département de physique > Physique théorique des matériaux
Ghosez, Philippe  ;  Université de Liège - ULiège > Département de physique > Physique théorique des matériaux
Language :
English
Title :
Revisiting the role of strain engineering in NdNiO3 thin film from first-principles calculations
Publication date :
01 October 2019
Event name :
26TH INTERNATIONAL WORKSHOP ON OXIDE ELECTRONICS
Event date :
from 29-09-2019 to 02-10-2019
Audience :
International
Available on ORBi :
since 22 May 2020

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