Kinked silicon nanowires: Superstructures by metal-assisted chemical etching

Finite-element modeling; Aspect ratio; Finite element method; Metals; Nanowires; Silicon; Biological cells; Chemical etching; Crystallographic orientations; Etching parameters; High aspect ratio; Mechanically stable; Metal-assisted chemical etching; Silicon nanowires; Etching

Abstract :

[en] We report on metal-assisted chemical etching of Si for the synthesis of mechanically stable, hybrid crystallographic orientation Si superstructures with high aspect ratio, above 200. This method sustains high etching rates and facilitates reproducible results. The protocol enables the control of the number, angle, and location of the kinks via successive etch-quench sequences. We analyzed relevant Au mask catalyst features to systematically assess their impact on a wide spectrum of etched morphologies that can be easily attained and customized by fine-tuning of the critical etching parameters. For instance, the designed kinked Si nanowires can be incorporated in biological cells without affecting their viability. An accessible numerical model is provided to explain the etch profiles and the physicochemical events at the Si/Au-electrolyte interface and offers guidelines for the development of finite-element modeling of metal-assisted Si chemical etching. © Copyright © 2019 American Chemical Society.

Disciplines :

Materials science & engineering

Author, co-author :

Sandu, G.; Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Université Catholique de Louvain, Louvain-la-Neuve, 1348, Belgium

Avila Osses, Jonathan ; Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Université Catholique de Louvain, Louvain-la-Neuve, 1348, Belgium

Luciano, M.; Interface and Complex Fluids Laboratory, Université de Mons, Mons, 7000, Belgium

Caina, D.; Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Université Catholique de Louvain, Louvain-la-Neuve, 1348, Belgium, Facultad de Ingeniería, Ciencias Físicas y Matemática, Universidad Central Del Ecuador, Quito, 170521, Ecuador

Stopin, A.; School of Chemistry, Cardiff University, Main Building, Park Place, Cardiff, CF10 3AT, United Kingdom

Bonifazi, D.; School of Chemistry, Cardiff University, Main Building, Park Place, Cardiff, CF10 3AT, United Kingdom

Gohy, J.-F.; Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain, Louvain-la-Neuve, 1348, Belgium

Silhanek, Alejandro ; Université de Liège - ULiège > Département de physique > Physique expérimentale des matériaux nanostructurés

Florea, I.; Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique, Palaiseau, 91128, France

Bahri, Mounib; Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504 CNRS - Université de Strasbourg, 67087 Strasbourg, France

More authors (5 more)

Language :

English

Title :

Kinked silicon nanowires: Superstructures by metal-assisted chemical etching

Publication date :

08 October 2019

Journal title :

Nano Letters

ISSN :

1530-6984

eISSN :

1530-6992

Publisher :

American Chemical Society

Volume :

Pages :

7681

Peer reviewed :

Peer Reviewed verified by ORBi

Funders :

ANR - Agence Nationale de la Recherche [FR]
FRIA - Fonds pour la Formation à la Recherche dans l'Industrie et dans l'Agriculture [BE]
RRA - National Radio Research Agency [KR]
F.R.S.-FNRS - Fonds de la Recherche Scientifique [BE]

Funding number :

Division of Arctic Sciences, ARC: 14/19-057; National Radio Research Agency, RRA: 15-CE09-0009-01

Available on ORBi :

since 13 November 2019

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