Classic and quantum capacitances in bernal bilayer and trilayer graphene field effect transistor

Bilayer Graphene; Capacitance voltage; External electric field; Gate electrodes; Graphene field-effect transistors; Metal-oxide-semiconductor capacitors; Quantum capacitance; Tunable band structures; Charge coupled devices; Electric fields; Field effect transistors; Graphene; Metallic compounds; Nanotechnology; Capacitance

Abstract :

[en] Our focus in this study is on characterizing the capacitance voltage (C-V) behavior of Bernal stacking bilayer graphene (BG) and trilayer graphene (TG) as the channel of FET devices. The analytical models of quantum capacitance (QC) of BG and TG are presented. Although QC is smaller than the classic capacitance in conventional devices, its contribution to the total metal oxide semiconductor capacitor in graphene-based FET devices becomes significant in the nanoscale. Our calculation shows that QC increases with gate voltage in both BG and TG and decreases with temperature with some fluctuations. However, in bilayer graphene the fluctuation is higher due to its tunable band structure with external electric fields. In similar temperature and size, QC in metal oxide BG is higher than metal oxide TG configuration. Moreover, in both BG and TG, total capacitance is more affected by classic capacitance as the distance between gate electrode and channel increases. However, QC is more dominant when the channel becomes thinner into the nanoscale, and therefore we mostly deal with quantum capacitance in top gate in contrast with bottom gate that the classic capacitance is dominant. © 2013 Hatef Sadeghi et al.

Disciplines :

Electrical & electronics engineering

Author, co-author :

Sadeghi, H.; TEPS Research Group, Footscray Park Campus, Victoria University, Melbourne, VIC 3011, Australia

Lai, D. T. H.; TEPS Research Group, Footscray Park Campus, Victoria University, Melbourne, VIC 3011, Australia

Redouté, Jean-Michel ; Université de Liège - ULiège > Dép. d'électric., électron. et informat. (Inst.Montefiore) > Systèmes microélectroniques intégrés

Zayegh, A.; TEPS Research Group, Footscray Park Campus, Victoria University, Melbourne, VIC 3011, Australia

Language :

English

Title :

Classic and quantum capacitances in bernal bilayer and trilayer graphene field effect transistor

Publication date :

2013

Journal title :

Journal of Nanomaterials

ISSN :

1687-4110

eISSN :

1687-4129

Publisher :

Hindawi Publishing Corporation, Egypt

Volume :

2013

Peer reviewed :

Peer Reviewed verified by ORBi

Available on ORBi :

since 06 September 2019

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