Specific absorption rate of inductively powered brain implanted circuits

Bone structure; Class E; Coil designs; Electronic device; Inductive link; Inductively powered; Specific absorption rate; Transmitted power; Transmitter circuits; Electromagnetic fields; Electromagnetic compatibility

Abstract :

[en] This paper discusses the simulated exposure to a 5 MHz electromagnetic field powering implanted electronic devices using an inductive link. A high efficiency class-E transmitter circuit operating at 5 MHz has been designed. The circuit generates a 1 W to 5 W transmitted power by means of two possible planar primary coil designs, and powers 5 identical implants which are individually equipped with a secondary inductor. Simulations illustrate that a maximum localized SAR level (averaged over 10 g) of 1.16 W/kg is obtained in a rectangular bone structure with a thickness of 10 mm, when the power transmission is equal to 5 W. © 2012 IEEE.

Disciplines :

Electrical & electronics engineering

Author, co-author :

Al-Kalbani, A.; Dept. of ECSE, Monash University, Wellington Road, Clayton, VIC 3800, Australia

Yuce, M. R.; Dept. of ECSE, Monash University, Wellington Road, Clayton, VIC 3800, Australia

Redouté, Jean-Michel ; Université de Liège - ULiège > Dép. d'électric., électron. et informat. (Inst.Montefiore) > Systèmes microélectroniques intégrés

Language :

English

Title :

Specific absorption rate of inductively powered brain implanted circuits

Publication date :

2012

Event name :

2012 Asia-Pacific Symposium on Electromagnetic Compatibility, APEMC 2012

Event date :

21 May 2012 through 24 May 2012

Audience :

International

Journal title :

Asia-Pacific Symposium on Electromagnetic Compatibility, APEMC

Pages :

457-460

Peer reviewed :

Peer reviewed

Commentary :

91737 9781457715587

Available on ORBi :

since 02 July 2019

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