Reference : An EMI resisting LIN driver in 0.35-micron high-voltage CMOS
Scientific congresses and symposiums : Paper published in a journal
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/2268/229079
An EMI resisting LIN driver in 0.35-micron high-voltage CMOS
English
Redouté, Jean-Michel mailto [Université de Liège - ULiège > Dép. d'électric., électron. et informat. (Inst.Montefiore) > Systèmes microélectroniques intégrés >]
Steyaert, M. [IEEE, Belgium, ESAT-MICAS, Katholieke Universiteit Leuven, 3001 Heverlee, Belgium]
2007
IEEE Journal of Solid-State Circuits
42
7
1574-1582
Yes (verified by ORBi)
Yes
International
00189200
ESSCIRC 2006 - 32nd European Solid-State Circuits Conference
19 September 2006 through 21 September 2006
[en] CMOS analog integrated circuits ; Driver circuits ; Electromagnetic compatibility ; Electromagnetic interference ; Direct power injection (DPI) ; Local Interconnect Network (LIN) ; Electric drives ; Electric potential ; Large scale systems ; Signal interference ; CMOS integrated circuits
[en] This paper describes the design of a Local Interconnect Network (LIN) integrated output driver circuit exhibiting a high degree of immunity against conducted electromagnetic interference (EMI). The transmitted signal of this driver is shaped with a predefined slope so as to reduce electromagnetic emission at higher frequencies. The effect of EMI coupling from the data bus into the driver circuit is countered using a new feedback scheme which shields the slope shaping function from the output stage. Although the output signal may be heavily corrupted by EMI, the LIN driver continues to deliver an unaltered duty cycle, which is mandatory to obtain an error-free data transmission. Measurements show that this driver circuit manages to withstand the highest levels of the direct power injection (DPI) measurements independently of the injected EMI level. © 2007 IEEE.
IWT, OIST PC, Okinawa Institute of Science and Technology Promotion Corporation; KU Leuven; OIST PC, Okinawa Institute of Science and Technology Promotion Corporation; IWT, Agentschap voor Innovatie door Wetenschap en Technologie; NCSR, National Council for Scientific Research; UCLA, University of California, Los Angeles; KU Leuven
http://hdl.handle.net/2268/229079
10.1109/JSSC.2007.899095

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