Reference : An integrated LVDS transmitter in 0.18-μm CMOS technology with high immunity to EMI
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/2268/228071
An integrated LVDS transmitter in 0.18-μm CMOS technology with high immunity to EMI
English
Matig-a, G. A. [Department of Electrical and Computer Systems Engineering, Monash University, Melbourne, VIC 3800, Australia]
Yuce, M. R. [Department of Electrical and Computer Systems Engineering, Monash University, Melbourne, VIC 3800, Australia]
Redouté, Jean-Michel mailto [Université de Liège - ULiège > Dép. d'électric., électron. et informat. (Inst.Montefiore) > Systèmes microélectroniques intégrés >]
2015
IEEE Transactions on Electromagnetic Compatibility
Institute of Electrical and Electronics Engineers Inc.
57
1
128-134
Yes (verified by ORBi)
International
00189375
[en] Analog integrated circuits ; CMOS integrated circuits ; Amplification ; Analog circuits ; Electromagnetic pulse ; Electromagnetic wave interference ; Integrated circuits ; Interference suppression ; Signal interference ; Transmitters ; Closed loop gain ; CMOS technology ; Common mode feedback ; Independent driving ; Low voltage differential signaling ; LVDS transmitters ; On-chip designs ; Transverse electromagnetic cell
[en] This paper presents an on-chip design topology that compensates the effects of electromagnetic interference (EMI) in a low-voltage differential signaling (LVDS) transmitter. The proposed structure enables the transmitter to maintain a wide differential opening by achieving a superior common-mode level independent driving current and common-mode feedback closed-loop gain. Direct power injection measurements illustrate that the proposed LVDS transmitter structure demonstrates a superior EMI immunity as it maintains an eye opening of at least 100 mVp-p in presence of a conductive EMI injection ranging from 150 to 2 GHz with an amplitude of up to 9 Vp-p. Additionally, transverse electromagnetic cell measurements validate the radiated immunity of the proposed integrated LVDS transmitter in presence of an EMI injection of 30 dBm (150 kHz-2 GHz). This EMI robust LVDS transmitter was designed using the UMC 0.18-μm CMOS process. © 1964-2012 IEEE.
http://hdl.handle.net/2268/228071
10.1109/TEMC.2014.2359032

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