Reference : High-resolution passive phase shifters for adaptive duplexing applications in SOS process
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/2268/228068
High-resolution passive phase shifters for adaptive duplexing applications in SOS process
English
Amirkhanzadeh, R. [College of Engineering and Science, Victoria University, Melbourne, VIC 8001, Australia]
Sjöland, H. [Department of Electrical and Information Technology, Lund University, SE-221 00 Lund, Sweden]
Redouté, Jean-Michel mailto [Université de Liège - ULiège > Dép. d'électric., électron. et informat. (Inst.Montefiore) > Systèmes microélectroniques intégrés >]
Nobbe, D. [Peregrine Semiconductor Corporation, Chicago, IL 60004, United States]
Faulkner, M. [College of Engineering and Science, Victoria University, Melbourne, VIC 8001, Australia]
2014
IEEE Transactions on Microwave Theory and Techniques
Institute of Electrical and Electronics Engineers Inc.
62
8
1678-1685
Yes (verified by ORBi)
International
0018-9480
1557-9670
[en] Adaptive duplexing ; Field effect transistors ; Passive networks ; Systems engineering ; Auto-transformers ; Duplexing ; High resolution ; Intercept points ; Lumped element ; Passive delay lines ; Power-handling capability ; Silicon-on-sapphire ; Phase shifters
[en] Two high-resolution passive delay line phase shifters in silicon-on-sapphire are compared. Both make use of digitally tuned capacitor loaded π sections to obtain 360° phase control. The first has a nominal resolution of 9-bit and uses ten sections, yielding an insertion loss (IL) of 12.6 dB at 1.4 GHz. The second employs a center tapped auto-transformer to provide 180° of phase shift, reducing both size and the IL while enabling a further 1-bit improvement in resolution. The measured IL in the 1.8-2.4-GHz frequency range is less than 7.3 dB. Stacked field-effect transistors were employed as switches to increase the power-handling capability. An input referred third intercept point (IIP3) of + 39 and + 54 dBm were measured for the first and second circuits, respectively. © 2014 IEEE.
http://hdl.handle.net/2268/228068
10.1109/TMTT.2014.2327980

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