Morphological study of Sol-Gel derived ZnO:In thin films

Crystal structure; Energy gap; Indium; Semiconductor doping; Sol-gels; Thin films; Zinc oxide; Zinc sulfide; Crystal phasis; Indium concentration; Indium doping; Morphological study; Nanostructured thin film; Root mean squared; Type structures; Wurtzite structure; Optical films

Abstract :

[en] This work presents morphological, structural and optical studies of ZnO and ZnO:In nanostructured thin films depending on In doping (four different concentrations). XRD study of 600°C annealed ZnO:In films reveals that crystallization strongly depends on indium concentration. The films are crystallized in wurtzite structure and only for the films with highest In addition, two crystal phases are detected wurtzite ZnO and cubic In2O3. The AFM investigation reveals that the lowest Root Mean Squared Roughness(RMS) is revealed for ZnO:In 0.5 film (15.96 nm) and the roughness increases up to 64.52 nm for ZnO:In 1. Columnar type structures can be observed in the AFM micrographs of the other two films - ZnO:In 2 and ZnO:In 3, as the columns vary in height and size. The effect of the indium doping into ZnO reveals changing of optical transmittance compared to ZnO film. The optical band gap of ZnO:In films, annealed at 600°C is in the range of 3.06-3.27 eV. © 2017 IEEE.

Disciplines :

Chemistry
Materials science & engineering
Physics

Author, co-author :

Ivanova, T.; Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Tzarigradsko chaussee 72, Sofia, Bulgaria

Harizanova, A.; Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Tzarigradsko chaussee 72, Sofia, Bulgaria

Koutzarova, T.; Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko chaussee 72, Sofia, Bulgaria

Vertruyen, Bénédicte ; Université de Liège - ULiège > Département de chimie (sciences) > Chimie inorganique structurale

Stefanov, B.; Department of Engineering Sciences, Ångström Laboratory, Uppsala University, P.O. Box 534, Uppsala, Sweden

Language :

English

Title :

Morphological study of Sol-Gel derived ZnO:In thin films

Publication date :

2017

Event name :

40th International Spring Seminar on Electronics Technology, ISSE 2017

Event date :

10 May 2017 through 14 May 2017

Audience :

International

Journal title :

Proceedings of the International Spring Seminar on Electronics Technology

ISSN :

2161-2528

Publisher :

IEEE Computer Society

Commentary :

129780 9781538605820

Available on ORBi :

since 22 June 2018

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