tin dioxide; thin films; sol-gel; metal-doping; group-IA elements
Abstract :
[en] This paper presents the results of an experimental work devoted to the synthesis and the characterization
of tin dioxide (SnO2
Þ thin layers doped with group-IA elements (Li, Na and K). The
materials were synthesized by the sol–gel method and deposited by dip-coating, using tin (II)
chloride dihydrate as a source of tin and absolute ethyl alcohol as solvent. Thin ¯lms prepared were
characterized by several techniques including X-ray di®raction (XRD), scanning electron microscopy
(SEM), infrared spectroscopy (IR), visible and ultraviolet spectroscopy and complex impedance
method. The results obtained show that the materials kept their tetragonal rutile structure
with preferred orientation of (101), whereas doping leads to a reduction of their energy band gap.
The complex impedance analysis suggests that the di®erent processes occurring at the electrode
interface are modeled by an electrical circuit not a®ected by the doping.
Disciplines :
Materials science & engineering
Author, co-author :
Benhebal, Hadj
Benrabah, Bedhiaf
Ammari, Aek
Madoune, Yacine
Lambert, Stéphanie ; Université de Liège > Department of Chemical Engineering > Department of Chemical Engineering
Language :
English
Title :
Structural and optoelectronic properties of SnO2 thin films doped by group-1A elements
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