[en] The lack of a successful p-type transparent semiconductor delays the future implementation of transparent electron- ics. In the group semiconducting compounds, cuprous oxide (Cu2O) presents promising electrical and manufacturing features that establish it as a suitable candidate for p-type transparent semiconductors. However, high absorbance in the visible range reduces its application practical devices.
In this work, we achieved the incorporation of magnesium in cuprous oxide grown by aerosol-assisted metal-organic chemical vapour deposition. The fabricated doped thin films reached up to 17% of magnesium, resulting in morphology changes. Electrical resistivity was reduced down to values as low as 6.6 Vcm, due to the increase of charge-carrier density. The optical transparency was enhanced compared to intrinsic cuprous oxide.
Disciplines :
Physics
Author, co-author :
Avelas Resende, João ; Université de Liège - ULiège > Form. doct. sc. (phys. - Paysage)
Jimenez, Carmen; Université de Grenoble Alpes > LMGP
Nguyen, Ngoc Duy ; Université de Liège > Département de physique > Physique des solides, interfaces et nanostructures
Deschanvres, Jean-Luc; Université de Grenoble Alpes > LMGP
Language :
English
Title :
Magnesium-doped cuprous oxide (Mg:Cu2O) thin films as a transparent p-type semiconductor
Publication date :
July 2016
Journal title :
Physica Status Solidi A. Applications and Materials Science