[en] In this letter, the Schottky-barrier height (SBH) lowering in Pt silicide/n-Si junctions and its implications to Schottky-barrier source/drain p-field-effect transistors (p-SBFETs) are studied experimentally and numerically. We demonstrate that the increase of the n-Si substrate doping is responsible for a larger hole SBH lowering through an image-force mechanism, which leads to a substantial gain of the drive current in the long-channel bulk p-SBFETs. Numerical simulations. show that the channel doping concentration is also critical for short-channel p/n-silicon-on-insulator SBFET performance.
Disciplines :
Electrical & electronics engineering
Author, co-author :
Lousberg, Grégory ; Université de Liège - ULiège > Dép. d'électric., électron. et informat. (Inst.Montefiore) > Electronique et microsystèmes
Yu, H. Y.
Froment, B.
Augendre, E.
De Keersgieter, A.
Lauwers, A.
Li, M. F.
Absil, Philippe; Interuniversity Microelectronics Center (Leuven)
Jurczak, M.
Biesemans, S.
Language :
English
Title :
Schottky-Barrier height lowering by an increase of the substrate doping in PtSi Schottky barrier source/drain FETs
Publication date :
February 2007
Journal title :
IEEE Electron Device Letters
ISSN :
0741-3106
eISSN :
1558-0563
Publisher :
Ieee-Inst Electrical Electronics Engineers Inc, Piscataway, United States - New Jersey
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