Reverse current transient behavior of pGeSn/nGe diodes

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Unpublished conference/Abstract (Scientific congresses and symposiums)

Baert, Bruno; Gupta, Somya; Gencarelli, Federica et al.

2015 • The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 9)

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https://hdl.handle.net/2268/178857

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Keywords :

GeSn; diodes; electrical characteristics; I-V characteristics; admittance spectroscopy

Disciplines :

Physics

Author, co-author :

Baert, Bruno ; Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures

Gupta, Somya; Katholieke Universiteit Leuven - KUL

Gencarelli, Federica; Katholieke Universiteit Leuven - KUL

Shimura, Yosuke; IMEC

Loo, Roger; IMEC

Simoen, Eddy; IMEC

Nguyen, Ngoc Duy ; Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures

Language :

English

Title :

Reverse current transient behavior of pGeSn/nGe diodes

Publication date :

2015

Event name :

The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 9)

Event place :

Montréal, Canada

Event date :

du 17 au 22 mai 2015

Audience :

International

Available on ORBi :

since 03 March 2015

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