Unpublished conference/Abstract (Scientific congresses and symposiums)
The role of C and N dopants incorporation in phase change materials
Noé, Pierre; Raty, Jean-Yves; Ghezzi, Giada et al.
2013MRS Spring Meeting 2013
Editorial reviewed
 

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Keywords :
infra-red; ab initio molecular dynamics; phase change materials
Abstract :
[en] Phase change memory (PCM) technology is considered to be among the most promising alternatives to conventional technologies in embedded memories [1]. To allow operation at relatively high temperatures in embedded applications, it is crucial to improve the stability of the amorphous phase. Carbon and nitrogen doping have been shown to significantly increase the crystallization temperature [1-3]. Moreover, the high RESET current requirement [2], which is a limit to the scalability of GeTe and GST, can be reduced by the incorporation of a dopant element [4]. In this presentation we focus on correlating experimental results and ab initio simulations to understand the effect of C and N incorporation in GeTe and GST PCM devices. Understanding the effect of dopants on the change of electronic properties and the mechanisms of the phase transformation requires analysis of the local order and structure of the amorphous to crystalline phases. In this context, we demonstrate that carbon and nitrogen deeply affects the structure and the dynamical properties of the amorphous phase of GeTe. In particular, the inclusion of N and C dopant elements in GeTe has a drastic effect on the vibrational modes of GeTe therefore improving the stability of the glass. This effect goes with an increased mechanical rigidity explaining why these doped GeTe compounds have a higher crystallization temperature than the undoped ones. Finally we will explore, mainly by FTIR and XRD measurements, the effect of C and N dopants during the annealing of amorphous PCMaterials towards their crystalline phases. These results will be discussed in order to understand the origin of the differences of the doped PCMaterials amorphous phase stability (data retention) observed between full sheet materials and the materials integrated in PCM devices. [1] A. Fantini et al., 2010 IEEE International Electron Devices Meeting (IEDM), 2010, pp. 29.21.21-29.21.24. [2] G. Betti Beneventi et al., Solid-State Electronics, 65-66 (2011) 197-204. [3] V. Sousa et al., EPCOS 2011. [4] Q. Hubert et al., IMW 2012.
Research center :
Physique des Solides, Interfaces et Nanostrructures
Disciplines :
Physics
Author, co-author :
Noé, Pierre
Raty, Jean-Yves  ;  Université de Liège - ULiège > Département de physique > Physique de la matière condensée
Ghezzi, Giada
Hippert, Françoise
Fillot, F.
Gourvest, E.
Souchier, E.
Perniola, L.
Sousa, Valérie
Hubert, Q.
Persico, A.
Henaff, E.
Tessaire, M.
Delaye, V.
Bichara, C.
Maitrejean, S.
More authors (6 more) Less
Language :
English
Title :
The role of C and N dopants incorporation in phase change materials
Publication date :
05 April 2013
Event name :
MRS Spring Meeting 2013
Event organizer :
American Materials Research Society
Event place :
San Francisco, United States
Event date :
from 01-04-2013 to 05-04-2013
Peer reviewed :
Editorial reviewed
Name of the research project :
A.R.C. Themoterm
Funders :
F.R.S.-FNRS - Fonds de la Recherche Scientifique [BE]
Commentary :
Abstract EE15.02
Available on ORBi :
since 03 April 2014

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