[en] The Raman spectrum of gallium oxide (beta-Ga2O3) nanowires with [001] growth direction is identical to that of the bulk Ga2O3 [Y. C. Choi Adv. Mater. 12, 746 (2000)] while that of beta-Ga2O3 nanowires with [40 (1) over bar] growth direction is redshifted by 4-23 cm(-1) [Y. H. Gao Appl. Phys. Lett. 81, 2267 (2002)]. Here we report the Raman and Fourier transform infrared spectra of beta-Ga2O3 nanowires with [110] growth direction which is blueshifted relative to the bulk spectra by similar to 10-40 cm(-1). Based on a first principles calculation of the strain dependence of Raman mode frequencies in bulk beta-Ga2O3, we correlate the observed frequency shifts to growth-direction-induced internal strains in the nanowires. (c) 2005 American Institute of Physics.
Disciplines :
Physics
Author, co-author :
RAO, Rita Flora ; Centre Hospitalier Universitaire de Liège - CHU > Salle maternité NDB
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Bibliography
G. Gundiah, A. Govindaraj, and C. N. R. Rao, Chem. Phys. Lett. 351, 189 (2002).
C. H. Liang, G. W. Meng, G. Z. Wang, Y. W. Wang, and L. D. Zhang, Appl. Phys. Lett. 78, 3202 (2001).
Y. C. Choi, Adv. Mater. (Weinheim, Ger.) 12, 746 (2000).
Y. H. Gao, Y. Bando, and T. Sato, Appl. Phys. Lett. 81, 2267 (2002).
S. Sharma and M. K. Sunkara, J. Am. Chem. Soc. 124, 12288 (2002).
S. Geller, J. Chem. Phys. 33, 676 (1960).
D. Dohy, G. Lucazeau, and A. Revcolecschi, J. Solid State Chem. 45, 180 (1982).
K. Fukumi and S. Sakka, Phys. Chem. Glasses 29, 1 (1988).
J. Rubio H. P. Van der Meuler, Solid-State Electron. 40, 707 (1996).
A. K. Arora, T. R. Ravindran, G. L. N. Reddy, A. K. Sikder, and D. S. Misra, Diamond Relat. Mater. 10, 1477 (2002).
S-L. Zhang, B-F. Zhu, F. Huang, Y. Yan, E. Shang, S. Fan, and W. Han, Solid State Commun. 111, 647 (1999).
L. Dai, X. L. Chen, X. N. Zhang, A. Z. Lin, T. Zhou, B. Q. Hu, and Z. Zhang, J. Appl. Phys. 92, 1062 (2002).
J. Dong and A. B. Chen, in SiC Power materials: Devices and Applications, edited by, F. C. Feng, (Springer-Verlag, Berlin 2004), pp. 63-87, and references therein.
J. Dong and O. F. Sankey, J. Appl. Phys. 0021-8979 10.1063/1.371969 87, 958 (2000); S. Deb, J. Dong, H. Hubert, P. F. McMillan, and O. F. Sankey, Solid State Commun. 114, 137 (2000).
J. Dong and O. F. Sankey, J. Appl. Phys. 0021-8979 10.1063/1.371969 87, 958 (2000); S. Deb, J. Dong, H. Hubert, P. F. McMillan, and O. F. Sankey, Solid State Commun. 114, 137 (2000).
H. K. Seo, S. Y. Bae, J. Park, H. Yang, K. S. Park, and S. Kim, J. Chem. Phys. 116, 9492 (2002).
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