Article (Scientific journals)
Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique
Waldron, Niamh; Wang, Gang; Nguyen, Ngoc Duy et al.
2012In ECS Transactions, 45, p. 115
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Keywords :
III-V; InGaAs; MOS
Abstract :
[en] We report on the fabrication on InGaAs/InP implant free quantum well (IFQW) n-MOSFET devices on 200mm wafers in a Si CMOS processing environment. The starting virtual InP substrates were prepared by means of the aspect-ratio-trapping technique. Post CMP these substrate resulted in a planar substrate with a rms roughness of 0.32 nm. After channel and gate processing source drain regions were formed by the selective epitaxial growth of Si doped InGaAs. Contact to the source/drain regions was made by a standard W-plug/metal 1 process. The contact resistance was estimated to be on the order of 7x10-7 [ohm sign].cm2. Fully processed devices clearly showed gate modulation albeit on top of high levels of source to drain leakage. The source of this leakage was determined to be the result of the unintentional background doping of the InP buffer layer. Simulations show that the inclusion of the p-InAlAs between the InP and InGaAs can effectively suppress this leakage. This work is a significant step towards the integration of InGaAs based devices on a standard CMOS platform.
Disciplines :
Physics
Author, co-author :
Waldron, Niamh;  IMEC
Wang, Gang;  MEMC
Nguyen, Ngoc Duy  ;  Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Orzali, Tommaso;  IMEC
Merckling, Clément;  IMEC
Brammertz, Guy;  IMEC
Ong, Patrick;  IMEC
Winderickx, Gillis;  IMEC
Hellings, Geert;  IMEC
Eneman, Geert;  IMEC
Caymax, Matty;  IMEC
Meuris, Marc;  IMEC
Horiguchi, Naoto;  IMEC
Thean, Aaron;  IMEC
More authors (4 more) Less
Language :
English
Title :
Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique
Publication date :
2012
Journal title :
ECS Transactions
ISSN :
1938-5862
eISSN :
1938-6737
Publisher :
The Electrochemical Society, Pennington, United States - New Jersey
Volume :
45
Pages :
115
Peer reviewed :
Peer reviewed
Available on ORBi :
since 21 July 2012

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