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Detailled Reference
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Unpublished conference/Abstract (Scientific congresses and symposiums)
Integration of III-V on Si for High-Mobility CMOS
Waldron, Niamh
;
Wang, Gang
;
Nguyen, Ngoc Duy
et al.
2012
•
4th International SiGe Technology and Device Meeting (ISTDM)
Permalink
https://hdl.handle.net/2268/119160
DOI
10.1109/ISTDM.2012.6222422
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Keywords :
Integration; CMOS; III-V
Disciplines :
Electrical & electronics engineering
Author, co-author :
Waldron, Niamh;
imec
Wang, Gang;
MEMC
Nguyen, Ngoc Duy
;
Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Orzali, Tommaso;
imec
Merckling, Clement;
imec
Brammertz, Guy;
imec
Ong, Patrick;
imec
Winderickx, Gillis;
imec
Hellings, Geert;
imec
Eneman, Geert;
imec
Caymax, Matty;
imec
Meuris, Marc;
imec
Horiguchi, Naoto;
imec
Thean, Aaron;
imec
More authors (4 more)
Less
Language :
English
Title :
Integration of III-V on Si for High-Mobility CMOS
Publication date :
2012
Event name :
4th International SiGe Technology and Device Meeting (ISTDM)
Event organizer :
University of California, Berkeley
Event place :
Berkeley, United States
Event date :
4-6/6/2012
By request :
Yes
Audience :
International
Available on ORBi :
since 03 May 2012
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Scopus citations
®
11
Scopus citations
®
without self-citations
6
OpenCitations
7
OpenAlex citations
11
Bibliography
Mitard, (2009) VLSI
Hill, (2010) IEDM Tech.Digest
Yokoyama, (2009) VLSI
Fitzgerald, (1991) Electron. Mater, 20, pp. 839-853. , Oct
Wang, (2010) J. Electrochem. Soc., 157 (1), pp. H1023
Waldron, (2012) ECS
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