On the structure of liquid IV-VI semiconductors

Raty, Jean-Yves; Gaspard, Jean-Pierre; Bionducci, M.; Ceolin, R.; Bellissent, R.

doi:10.1016/S0022-3093(99)00236-7

Reference : On the structure of liquid IV-VI semiconductors


	Document type :	Scientific journals : Article
	Discipline(s) :	Physical, chemical, mathematical & earth Sciences : Physics Physical, chemical, mathematical & earth Sciences : Chemistry
	To cite this reference:	http://hdl.handle.net/2268/109692

Title :	On the structure of liquid IV-VI semiconductors
Language :	English
Author, co-author :	Raty, Jean-Yves [Université de Liège - ULiège > Département de physique > Physique de la matière condensée]
	Gaspard, Jean-Pierre [Université de Liège - ULiège > Département de physique > Département de physique]
	Bionducci, M. [> > > >]
	Ceolin, R. [> > > >]
	Bellissent, R. [> > > >]
Publication date :	1999
Journal title :	Journal of Non-Crystalline Solids
Publisher :	Elsevier Science
Volume :	250-252
Pages :	277-280280
Peer reviewed :	Yes (verified by ORBi)
Audience :	International
ISSN :	0022-3093
City :	Amsterdam
Country :	The Netherlands
Keywords :	[en] Experimental/ electrical resistivity ; germanium compounds ; IV-VI semiconductors ; liquid semiconductors ; liquid structure ; neutron diffraction ; tin compounds ; van der Waals forces/ structure ; liquid IV-VI semiconductors ; crystalline structure ; stoichiometric IV-VI semiconductors ; NaCl structure ; distortion amplitude ; corrugated planes ; covalently bonded atoms ; dispersion Van der Waals forces ; neutron scattering ; liquid phases ; GeS ; GeSe ; GeTe ; SnS ; SnSe ; SnTe ; local order ; conductivity/ A6125K Structure of molten salts A7220F Low-field transport and mobility ; piezoresistance (semiconductors/insulators) A7280P Electrical conductivity of liquid semiconductors/ GeS/bin Ge /bin S/bin ; GeSe/bin Ge /bin Se/bin ; GeTe/bin Ge /bin Te/bin ; SnS/bin Sn /bin S/bin ; SnSe/bin Se /bin Sn/bin ; SnTe/bin Sn /bin Te/bin
Abstract :	[en] The crystalline structure of most stoichiometric IV-VI semiconductors can be viewed as a distortion of the NaCl structure; the distortion amplitude depends on the components. As a result, corrugated planes of covalently bonded atoms are linked by dispersion (Van der Waals) forces. Neutron scattering experiments were performed on the liquid phases of a series of IV-VI compounds (GeS, GeSe, GeTe, SnS, SnSe and SnTe). We show that the evolution of the local order is correlated with the conductivity measurements
Target :	Researchers ; Professionals ; Students
Permalink :	http://hdl.handle.net/2268/109692
DOI :	10.1016/S0022-3093(99)00236-7
Other URL :	http://www.sciencedirect.com/science/article/pii/S0022309399002367

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