Keywords :
Experimental/ electrical resistivity; germanium compounds; IV-VI semiconductors; liquid semiconductors; liquid structure; neutron diffraction; tin compounds; van der Waals forces/ structure; liquid IV-VI semiconductors; crystalline structure; stoichiometric IV-VI semiconductors; NaCl structure; distortion amplitude; corrugated planes; covalently bonded atoms; dispersion Van der Waals forces; neutron scattering; liquid phases; GeS; GeSe; GeTe; SnS; SnSe; SnTe; local order; conductivity/ A6125K Structure of molten salts A7220F Low-field transport and mobility; piezoresistance (semiconductors/insulators) A7280P Electrical conductivity of liquid semiconductors/ GeS/bin Ge /bin S/bin; GeSe/bin Ge /bin Se/bin; GeTe/bin Ge /bin Te/bin; SnS/bin Sn /bin S/bin; SnSe/bin Se /bin Sn/bin; SnTe/bin Sn /bin Te/bin
Abstract :
[en] The crystalline structure of most stoichiometric IV-VI semiconductors can be viewed as a distortion of the NaCl structure; the distortion amplitude depends on the components. As a result, corrugated planes of covalently bonded atoms are linked by dispersion (Van der Waals) forces. Neutron scattering experiments were performed on the liquid phases of a series of IV-VI compounds (GeS, GeSe, GeTe, SnS, SnSe and SnTe). We show that the evolution of the local order is correlated with the conductivity measurements
Scopus citations®
without self-citations
9
