Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique

Waldron, Niamh; Wang, Gang; Nguyen, Ngoc Duy; Orzali, Tommaso; Merckling, Clement; Brammertz, Guy; Ong, Patrick; Winderickx, Gillis; Hellings, Geert; Eneman, Geert; Caymax, Matty; Meuris, Marc; Horiguchi, Naoto; Thean, Aaron

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Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique

Waldron, Niamh; Wang, Gang; Nguyen, Ngoc Duy et al.

2012 • In 221st ECS Meeting

Peer reviewed

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https://hdl.handle.net/2268/107503

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Keywords :

III-V; CMOS

Disciplines :

Physics

Author, co-author :

Waldron, Niamh; IMEC

Wang, Gang; MEMC

Nguyen, Ngoc Duy ; Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures

Orzali, Tommaso; IMEC

Merckling, Clement; IMEC

Brammertz, Guy; IMEC

Ong, Patrick; IMEC

Winderickx, Gillis; IMEC

Hellings, Geert; IMEC

Eneman, Geert; IMEC

More authors (4 more)

Language :

English

Title :

Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique

Publication date :

2012

Event name :

221st ECS Meeting

Event organizer :

ECS

Event place :

Seattle, United States

Event date :

6-11/5/2012

Audience :

International

Main work title :

221st ECS Meeting

Publisher :

ECS, Pennington, United States

ISBN/EAN :

2151-2043

Collection name :

ECS Meeting Abstracts MA2012-01

Peer reviewed :

Peer reviewed

Available on ORBi :

since 11 January 2012

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