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State of the art of InP and GaAs quantum cascade lasers
Scamarcio, Gaetano; Spagnolo, Vincenzo; Troccoli, Mariano et al.
2002In IEEE International Conference on Indium Phosphide & Related Materials (IPRM), p. 731-734
Peer reviewed
 

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Keywords :
Quantum cascade lasers; superlattices; Laser theory; electron-phonon interaction; hot carriers; GaAs-AlGaAs; micro-probe Raman measurements; micro-probe luminescence mearutement; thermal resistance
Abstract :
[en] The key physical phenomena associated with long-wavelength infrared emission and laser action in quantum cascade lasers based on InP/GaInAs/AlInAs and GaAs/AlGaAs heterostructures are reviewed. The effect of different tunnel injection schemes on the hot-electron energy distributions is compared. High-power superlattice lasers with improved high-energy injection schemes are described. The local temperature distribution, the thermal resistance and the hot-phonon effects are monitored in operating devices by micro-probe Raman and luminescence measurements.
Disciplines :
Physics
Author, co-author :
Scamarcio, Gaetano
Spagnolo, Vincenzo
Troccoli, Mariano
Zanolli, Zeila ;  Universita' degli studi di Bari > Physics
Rizzi, Francesco
Vitiello, Miriam
Marano, Danilo
Sabato, Anna
Catalano, Ida Maria
Sibilano, Michele
Calabrese, Pietro
Language :
English
Title :
State of the art of InP and GaAs quantum cascade lasers
Publication date :
2002
Event name :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Event organizer :
IEEE Electron Devices Society
Event place :
Stockholm, Sweden
Event date :
12 - 16 May 2002
Audience :
International
Journal title :
IEEE International Conference on Indium Phosphide & Related Materials (IPRM)
ISSN :
1092-8669
Publisher :
IEEE, Piscataway, N.J., United States
Pages :
731-734
Peer reviewed :
Peer reviewed
Available on ORBi :
since 28 October 2011

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