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Sohier Thibault

Département de physique > Physique des matériaux et nanostructures

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Main Referenced Co-authors
Verstraete, Matthieu  (7)
Gibertini, Marco (3)
Marzari, Nicola (2)
Banszerus, L. (1)
Block, A. (1)
Main Referenced Keywords
2D materials (2); CECI (2); Electron-phonon interactions (2); Electronic Transport (2); transition metal dichalcogenides (2);
Main Referenced Unit & Research Centers
CESAM - Complex and Entangled Systems from Atoms to Materials - ULiège [BE] (5)
Main Referenced Disciplines
Physics (8)

Publications (total 8)

The most downloaded
155 downloads
Wang, Y., Sohier, T., Watanabe, K., Taniguchi, T., Verstraete, M., & Tutuc, E. (2021). Electron mobility in monolayer WS2 encapsulated in hexagonal boron-nitride. Applied Physics Letters, 118 (10), 102105. doi:10.1063/5.0039766 https://hdl.handle.net/2268/258255

The most cited

44 citations (Scopus®)

Pogna, E. A. A., Jia, X., Principi, A., Block, A., Banszerus, L., Liu, X., Sohier, T., Forti, S., Soundarapandian, K., Terrés, B., Mehew, J. D., Trovatello, C., Coletti, C., Koppens, F. H. L., Bonn, M., Wang, H. I., Van Hulst, N., Verstraete, M., Peng, H., ... Zhang, J. (2021). Hot-Carrier Cooling in High-Quality Graphene Is Intrinsically Limited by Optical Phonons. ACS Nano, 15 (7), 11285-11295. doi:10.1021/acsnano.0c10864 https://hdl.handle.net/2268/268664

Castillo, I., Sohier, T., Paillet, M., Cakiroglu, D., Consejo, C., Wen, C., Wasem Klein, F., Zhao, M.-Q., Ouerghi, A., Contreras, S., Johnson, A. T. C., Verstraete, M., Jouault, B., & Nanot, S. (01 June 2023). Metal-insulator crossover in monolayer MoS2. Nanotechnology, 34 (33), 335202. doi:10.1088/1361-6528/acd3f7
Peer Reviewed verified by ORBi

Sohier, T., de Melo, P. M. M. C., Zanolli, Z., & Verstraete, M. (April 2023). The impact of valley profile on the mobility and Kerr rotation of transition metal dichalcogenides. 2D Materials, 10 (2), 025006. doi:10.1088/2053-1583/acb21c
Peer Reviewed verified by ORBi

Zhang, R., Marrazzo, A., Verstraete, M., Marzari, N., & Sohier, T. (2021). Gate control of spin-layer-locking FETs and application to monolayer LuIO. Nano Letters. doi:10.1021/acs.nanolett.1c02322
Peer Reviewed verified by ORBi

Wang, Y., Sohier, T., Watanabe, K., Taniguchi, T., Verstraete, M., & Tutuc, E. (2021). Electron mobility in monolayer WS2 encapsulated in hexagonal boron-nitride. Applied Physics Letters, 118 (10), 102105. doi:10.1063/5.0039766
Peer Reviewed verified by ORBi

Pogna, E. A. A., Jia, X., Principi, A., Block, A., Banszerus, L., Liu, X., Sohier, T., Forti, S., Soundarapandian, K., Terrés, B., Mehew, J. D., Trovatello, C., Coletti, C., Koppens, F. H. L., Bonn, M., Wang, H. I., Van Hulst, N., Verstraete, M., Peng, H., ... Zhang, J. (2021). Hot-Carrier Cooling in High-Quality Graphene Is Intrinsically Limited by Optical Phonons. ACS Nano, 15 (7), 11285-11295. doi:10.1021/acsnano.0c10864
Peer Reviewed verified by ORBi

Sohier, T., Gibertini, M., & Verstraete, M. (2021). Remote free-carrier screening to boost the mobility of Fröhlich-limited two-dimensional semiconductors. Physical Review Materials, 5 (2), 024004. doi:10.1103/PhysRevMaterials.5.024004
Peer Reviewed verified by ORBi

Sohier, T., Gibertini, M., & Verstraete, M. (2020). Remote free-carrier screening to boost the mobility of of Fröhlich-limited 2D semiconductors. ORBi-University of Liège. https://orbi.uliege.be/handle/2268/252649.

Sohier, T., Gibertini, M., & Marzari, N. (2020). Profiling novel high-conductivity 2D semiconductors. ORBi-University of Liège. https://orbi.uliege.be/handle/2268/249843. doi:10.1088/2053-1583/abc5d0

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