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Low-temperature epitaxial growth of heavily-doped n-Si and n-SiGe layers using trisilane as Si precursor gas for the monocrystalline emitter in bipolar transistors
Nguyen, Ngoc Duy
2008
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https://hdl.handle.net/2268/98540
 

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Keywords :
Low-temperature chemical vapor deposition; Heavy doping; Epitaxial growth; Monocrystalline emitter; BiCMOS
Disciplines :
Materials science & engineering
Author, co-author :
Nguyen, Ngoc Duy  ;  IMEC
Language :
English
Title :
Low-temperature epitaxial growth of heavily-doped n-Si and n-SiGe layers using trisilane as Si precursor gas for the monocrystalline emitter in bipolar transistors
Publication date :
2008
Available on ORBi :
since 09 September 2011

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