Low-temperature epitaxial growth of heavily-doped n-Si and n-SiGe layers using trisilane as Si precursor gas for the monocrystalline emitter in bipolar transistors - 2008
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Low-temperature epitaxial growth of heavily-doped n-Si and n-SiGe layers using trisilane as Si precursor gas for the monocrystalline emitter in bipolar transistors
Low-temperature epitaxial growth of heavily-doped n-Si and n-SiGe layers using trisilane as Si precursor gas for the monocrystalline emitter in bipolar transistors
