[en] The hardness of Ti/TiN nanolaminated films is investigated in this study. Monolithic Ti and TiN films and Ti/TiN multilayers were deposited on silicon substrates by radio-frequency sputtering. The period thickness of multilayers was decreased from 20 to 2.5 nm. Grazing x-ray reflectometry showed that the modulation of composition of Ti/TiN multilayers exists for all the period thickness considered. From nanoindentation measurements, we determined the hardness and Young's modulus of multilayers. Hardness increased with decreasing period thickness to go beyond the rule-of-mixture value for samples with period thickness of Lambda less than or equal to 5 nm. The maximum hardness, 1.6 times higher than the value obtained by the rule of mixture, is obtained for Lambda=2.5 nm. Our results are compared to a dislocation-based model previously introduced by Lehoczky. (C) 2000 American Institute of Physics. [S0021-8979(00)09411-1].
Disciplines :
Mechanical engineering
Author, co-author :
Ben Daia, M.; Laboratoire Multicouches Nanométriques (LMN), Université d'Evry Val d'Essonne, Bd F. Mitterrand, 91025 Evry cedex, France
Aubert, P.; Laboratoire Multicouches Nanométriques (LMN), Université d'Evry Val d'Essonne, Bd F. Mitterrand, 91025 Evry cedex, France
Labdi, S.; Laboratoire Multicouches Nanométriques (LMN), Université d'Evry Val d'Essonne, Bd F. Mitterrand, 91025 Evry cedex, France
Sant, C.; Laboratoire Multicouches Nanométriques (LMN), Université d'Evry Val d'Essonne, Bd F. Mitterrand, 91025 Evry cedex, France
Sadi, F. A.; Laboratoire Multicouches Nanométriques (LMN), Université d'Evry Val d'Essonne, Bd F. Mitterrand, 91025 Evry cedex, France
Houdy, Ph.; Laboratoire Multicouches Nanométriques (LMN), Université d'Evry Val d'Essonne, Bd F. Mitterrand, 91025 Evry cedex, France
Bozet, Jean-Luc ; Université de Liège - ULiège > Département de chimie appliquée > Chimie appliquée - Cryotribologie
Language :
English
Title :
Nanoindentation investigation of Ti/TiN multilayers films
Publication date :
2000
Journal title :
Journal of Applied Physics
ISSN :
0021-8979
eISSN :
1089-7550
Publisher :
American Institute of Physics, Melville, United States - New York