Electrical characterization of InGaN/GaN multiple-quantum-well structures by thermal admittance spectroscopy

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Poster (Scientific congresses and symposiums)

Nguyen, Ngoc Duy; Schmeits, Marcel; Germain, Marianne et al.

2002 • International Workshop on Nitride Semiconductors

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https://hdl.handle.net/2268/69108

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Keywords :

InGaN; GaN; Quantum well; Electrical characterization; Admittance spectroscopy

Disciplines :

Physics

Author, co-author :

Nguyen, Ngoc Duy ; Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures

Schmeits, Marcel; Université de Liège - ULiège > Département de physique

Germain, Marianne; Université de Liège - ULiège > Département de physique

Schineller, Bernd; AIXTRON AG

Heuken, Michael; AIXTRON AG

Language :

English

Title :

Electrical characterization of InGaN/GaN multiple-quantum-well structures by thermal admittance spectroscopy

Publication date :

2002

Event name :

International Workshop on Nitride Semiconductors

Event place :

Aachen, Germany

Event date :

22-25/7/2002

Audience :

International

Available on ORBi :

since 13 August 2010

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