[en] The electrical characteristics of CIGS-based solar cell heterostructure have been simulated by numerically solving the basic semiconductor equations by means of a finite differences method based on a Scharfetter-Gummel discretization scheme. The electric potential, electric field, carrier concentrations, current densities and recombination rates are obtained as function of the space coordinate and the bias voltage. Starting with the analysis of a single absorber layer structure sandwiched between two metal electrodes, we subsequently studied the properties of the CIGS/ZnO pn heterojunction and the influence of the buffer layer thickness in the CIGS/CdS/ZnO on the cell electrical response. A special focus was also given to the influence of grain boundaries in the bulk of CIGS depending on the defects nature and concentration.
Disciplines :
Physics
Author, co-author :
Amand, Julien ; Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Nguyen, Ngoc Duy ; Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Language :
English
Title :
Numerical simulation of the electrical characteristics of CIGS/CdS/ZnO solar cell heterostructures
