Baert, B. (2016). Impact of electron trap states on the transport properties of GeSn semiconducting heterostructures assessed by electrical characterizations [Doctoral thesis, ULiège - Université de Liège]. ORBi-University of Liège. https://orbi.uliege.be/handle/2268/201505 |
Baert, B., Gupta, S., Gencarelli, F., Loo, R., Simoen, E., & Nguyen, N. D. (September 2015). Analysis of the time-dependent electrical current in reverse-biased p-GeSn/n-Ge mesa diodes [Poster presentation]. E-MRS 2015 Fall Meeting. |
Baert, B., Gupta, S., Gencarelli, F., Loo, R., Simoen, E., & Nguyen, N. D. (August 2015). Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes. Solid-State Electronics, 110, 65-70. doi:10.1016/j.sse.2015.01.007 |
Baert, B., Gupta, S., Gencarelli, F., Shimura, Y., Loo, R., Simoen, E., & Nguyen, N. D. (2015). Reverse current transient behavior of pGeSn/nGe diodes [Paper presentation]. The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 9), Montréal, Canada. |
Wirths, S., Stange, D., Pampillon, M.-A., Tiedemann, A., Mussler, G., Fox, A., Breuer, U., Baert, B., San Andres, E., Nguyen, N. D., Hartmann, J.-M., Ikonic, Z., Mantl, S., & Buca, D. (2015). High‐k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors. ACS Applied Materials and Interfaces, 7, 62-67. doi:10.1021/am5075248 |
Baert, B., Cerica, D., Schmeits, M., & Nguyen, N. D. (13 November 2014). Electrical modelling of interface traps in GeSn MOS structures [Paper presentation]. JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration, Leuven, Belgium. |
Baert, B., Gupta, S., Gencarelli, F., Loo, R., Simoen, E., & Nguyen, N. D. (15 September 2014). Impact of traps on the electrical characteristics of GeSn/Ge diodes [Poster presentation]. E-MRS 2014 Fall Meeting - Symposium J, Warsaw, Poland. |
Baert, B., Gupta, S., Gencarelli, F., Loo, R., Simoen, E., & Nguyen, N. D. (03 June 2014). Electrical characterization of pGeSn/nGe diodes [Paper presentation]. 7th International Silicon-Germanium Technology and Device Meeting (2014 ISTDM), Singapore. doi:10.1109/ISTDM.2014.6874640 |
Baert, B., Schmeits, M., & Nguyen, N. D. (2014). Study of the energy distribution of the interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics. Applied Surface Science, 291, 25-30. doi:10.1016/j.apsusc.2013.09.022 |
Gupta, S., Simoen, E., Asano, T., Nakatsuka, O., Gencarelli, F., Shimura, Y., Moussa, A., Loo, R., Zaima, S., Baert, B., Dobri, A., Nguyen, N. D., & Heyns, M. (04 June 2013). Electrical Activity of Threading Dislocations and Defect Complexes in GeSn Epitaxial Layers [Paper presentation]. The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan. |
Baert, B., Gupta, S., Schmeits, M., Simoen, E., & Nguyen, N. D. (June 2013). Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics [Poster presentation]. The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan. |
Baert, B., Schmeits, M., & Nguyen, N. D. (May 2013). Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics [Paper presentation]. European Materials Research Society (E-MRS) 2013 Spring Meeting. |
Baert, B., Nakatsuka, O., Zaima, S., & Nguyen, N. D. (2013). Impedance Spectroscopy of GeSn-based Heterostructures. ECS Transactions, 50 (9), 481-490. doi:10.1149/05009.0481ecst |
Baert, B., & Nguyen, N. D. (June 2012). Numerical Simulation of the Electrical Characteristics of GeSn/Ge Semiconducting Heterostructures [Poster presentation]. "Jaszowiec" International School and Conference on the Physics of Semiconductors. |
Baert, B., Nakatsuka, O., Zaima, S., & Nguyen, N. D. (2012). Impedance spectroscopy of GeSn/Ge heterostructures by a numerical method. In 222nd ECS Meeting, 2012. ECS. |
Baert, B., Truong, D. Y. N., Nakatsuka, O., Zaima, S., & Nguyen, N. D. (2012). Electrical Characterization of p-Ge1-xSnx/p-Ge and p-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy [Poster presentation]. 6th International SiGe Technology and Device Meeting (ISTDM), Berkeley, United States - California. |
Aazou, S., Ibral, A., Assaid, M., Baert, B., & Nguyen, N. D. (2011). New method for photovoltaic solar cell physical parameters extraction [Paper presentation]. Congrès International sur les Energies Renouvelables et l'Efficacité Energétique (CIEREE'2011), Fès, Morocco. |