Sliti, N., Touihri, S., & Nguyen, N. D. (June 2023). Numerical modeling and analysis of AZO/Cu2O transparent solar cell with a TiO2 buffer layer. Engineering Research Express, 5 (2), 025013. doi:10.1088/2631-8695/accacf |
Jiang, L., Xue, C., Marinkovic, S., Fourneau, E., Xu, T.-Q., Cai, X.-W., Nguyen, N. D., Silhanek, A., & Zhou, Y.-H. (01 August 2022). Tunable domino effect of thermomagnetic instabilities in superconducting films with multiply-connected topological structures. New Journal of Physics, 24 (8), 083017. doi:10.1088/1367-2630/ac83e3 |
Ratz, T., Nguyen, N. D., Brammertz, G., Vermang, B., & Raty, J.-Y. (2022). Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite. Journal of Materials Chemistry A. doi:10.1039/D1TA09620F |
Ratz, T., Raty, J.-Y., Brammertz, G., Vermang, B., & Nguyen, N. D. (30 June 2021). Opto-electronic properties and solar cell efficiency modelling of Cu2ZnXS4 (X=Sn,Ge,Si) kesterites. Journal of Physics : Energy, 3 (3), 035005. doi:10.1088/2515-7655/abefbe |
Resende, J., Nguyen, V.-S., Fleischmann, C., Bottiglieri, L., Brochen, S., Vandervorst, W., Favre, W., Jimenez, C., Deschanvres, J.-L., & Nguyen, N. D. (2021). Grain‐boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties. Scientific Reports, 11, 7788. doi:10.1038/s41598-021-86969-7 |
Lombardo, J., Collienne, S., Petrillo, A., Fourneau, E., Nguyen, N. D., & Silhanek, A. (12 November 2019). Electromigration-induced resistance switching in indented Al microstrips. New Journal of Physics, 21 (11), 113015. doi:10.1088/1367-2630/ab5025 |
Ratz, T., Brammertz, G., Caballero, R., Léon, M., Canulescu, S., Schou, J., Gütay, L., Pareek, D., Taskesen, T., Kim, D.-H., Kang, J.-K., Malerba, C., Redigner, A., Saucedo, E., Shin, B., Tampo, H., Timmo, K., Nguyen, N. D., & Vermang, B. (12 September 2019). Physical routes for the synthesis of kesterite. Journal of Physics : Energy, 1 (4). doi:10.1088/2515-7655/ab281c |
Periyannan, S., Manceriu, L., Nguyen, N. D., KLEIN, A., JAEGERMANN, W., Colson, P., Henrist, C., & Cloots, R. (2019). Influence of ZnO Surface Modification on the Photocatalytic Performance of ZnO/NiO Thin Films. Catalysis Letters, 1-12. doi:10.1007/s10562-019-02781-z |
Resende, J., Chaix-Pluchery, O., Rovezzi, M., Malier, Y., Renevier, H., Nguyen, N. D., Deschanvres, J.-L., & Jimenez, C. (April 2019). Resilience of Cuprous Oxide under Oxidizing Thermal Treatments via Magnesium Doping. Journal of Physical Chemistry C, 123 (14), 8663-8670. doi:10.1021/acs.jpcc.9b00408 |
Bellet, D., Lagrange, M., Sannicolo, T., Aghazadehchors, S., Nguyen, V. H., Langley, D., Munoz-Rojas, D., Jimenez, C., Bréchet, Y., & Nguyen, N. D. (May 2017). Transparent Electrodes Based on Silver Nanowire Networks: From Physical Considerations towards Device Integration. Materials, 10, 570. doi:10.3390/ma10060570 |
Brisbois, J., Gladilin, V. N., Tempere, J., Devreese, J. T., Moshchalkov, V. V., Colauto, F., Motta, M., Johansen, T. H., Fritzsche, J., Adami, O.-A., Nguyen, N. D., Ortiz, W. A., Kramer, R. B. G., & Silhanek, A. (March 2017). Flux penetration in a superconducting film partially capped with a conducting layer. Physical Review. B, 95, 94506. doi:10.1103/PhysRevB.95.094506 |
Brisbois, J., Motta, M., Avila Osses, J., Shaw, G., Devillers, T., Dempsey, N. M., Veerapandian, S. K. P., Colson, P., Vanderheyden, B., Vanderbemden, P., Ortiz, W. A., Nguyen, N. D., Kramer, R. B. G., & Silhanek, A. (06 June 2016). Imprinting superconducting vortex footsteps in a magnetic layer. Scientific Reports, 6, 27159. doi:10.1038/srep27159 |
Brisbois, J., Adami, O.-A., Avila Osses, J., Motta, M., Ortiz, W. A., Nguyen, N. D., Vanderbemden, P., Vanderheyden, B., Kramer, R. B. G., & Silhanek, A. (23 February 2016). Magnetic flux penetration in Nb superconducting films with lithographically defined micro-indentations. Physical Review. B, 93 (5), 054521. |
Baert, B., Gupta, S., Gencarelli, F., Loo, R., Simoen, E., & Nguyen, N. D. (August 2015). Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes. Solid-State Electronics, 110, 65-70. doi:10.1016/j.sse.2015.01.007 |
Brisbois, J., Vanderheyden, B., Colauto, F., Motta, M., Ortiz, W. A., Fritzsche, J., Nguyen, N. D., Hackens, B., Adami, O.-A., & Silhanek, A. (07 October 2014). Classical analogy for the deflection of flux avalanches by a metallic layer. New Journal of Physics, 16 (10), 103003. doi:10.1088/1367-2630/16/10/103003 |
Langley, D., Lagrange, M., Giusti, G., Jimenez, C., Bréchet, Y., Nguyen, N. D., & Bellet, D. (2014). Metallic nanowire networks: effects of thermal annealing on electrical resistance. Nanoscale, 6, 13535. doi:10.1039/c4nr04151h |
Waldron, N., Wang, G., Nguyen, N. D., Orzali, T., Merckling, C., Brammertz, G., Ong, P., Winderickx, G., Hellings, G., Eneman, G., Caymax, M., Meuris, M., Horiguchi, N., & Thean, A. (2012). Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique. ECS Transactions, 45, 115. doi:10.1149/1.3700460 |
Waldron, N., Nguyen, N. D., Lin, D., Brammertz, G., Vincent, B., Firrincieli, A., Windericks, G., Sioncke, S., De Jaeger, B., Mitard, J., Wang, W.-E., Heyns, M., Caymax, M., Meuris, M., Absil, P., & Hoffmann, T. (2011). Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment. ECS Transactions, 35, 299. doi:10.1149/1.3569922 |
Wang, G., Leys, M., Nguyen, N. D., Loo, R., Richard, O., Bender, H., Heyns, M., & Caymax, M. (2011). Growth of high quality InP layers in STI trenches on miscut Si (001) substrates. Journal of Crystal Growth, 315, 32. doi:10.1016/j.jcrysgro.2010.07.039 |
Bogdanowicz, J., Dortu, F., Clarysse, T., Vandervorst, W., Rosseel, E., Nguyen, N. D., Shaughnessy, D., Salnick, A., & Nicolaides, L. (2010). Non-destructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curves. Journal of Vacuum Science and Technology. Part B, 28 (1), 1C1. doi:10.1116/1.3269737 |
Nguyen, N. D., Wang, G., Brammertz, G., Leys, M., Waldron, N., Winderickx, G., Lismont, K., Dekoster, J., Loo, R., Meuris, M., Degroote, S., Buttita, F., O'Neil, B., Féron, O., Lindner, J., Schulte, F., Schineller, B., Heuken, M., & Caymax, M. (2010). Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic applications. ECS Transactions, 33, 933. doi:10.1149/1.3487625 |
Schineller, B., Nguyen, N. D., & Heuken, M. (2010). Growth of III/V materials on large area silicon. ECS Transactions, 28, 233. doi:10.1149/1.3367955 |
Wang, G., Nguyen, N. D., Leys, M., Loo, R., Richard, O., Brammertz, G., Meuris, M., Heyns, M., & Caymax, M. (2010). Selective epitaxial growth of InP in STI trenches on off-axis Si(001) substrates. ECS Transactions, 27, 959. doi:10.1149/1.3360736 |
Buca, D., Minamisawa, R. A., Trinkaus, H., Holländer, B., Nguyen, N. D., Loo, R., & Mantl, S. (2009). Relaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/δ-Si:C/Si(100) substrates. Applied Physics Letters, 95, 144103. doi:10.1063/1.3240409 |
Nguyen, N. D., Rosseel, E., Takeuchi, S., Everaert, J.-L., Yang, L., Goossens, J., Moussa, A., Clarysse, T., Richard, O., Bender, H., Zaima, S., Sakai, A., Loo, R., Lin, J. C., Vandervorst, W., & Caymax, M. (2009). Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology. Thin Solid Films, 518 (6), 48. doi:10.1016/j.tsf.2009.10.053 |
Park, S.-Y., Anisha, R., Berger, P., Loo, R., Nguyen, N. D., Takeuchi, S., & Caymax, M. (2009). Si/SiGe Resonant Interband Tunneling Diodes Incorporating δ-Doping Layers Grown by Chemical Vapor Deposition. IEEE Electron Device Letters, 30, 1173. doi:10.1109/LED.2009.2030989 |
Takeuchi, S., Nguyen, N. D., Goossens, J., Caymax, M., & Loo, R. (2009). SiGe growth using Si3H8 by low temperature chemical vapor deposition. Thin Solid Films, 518 (6), 18. doi:10.1016/j.tsf.2009.10.047 |
You, S., Van Huylenbroeck, S., Nguyen, N. D., Sibaja-Hernandez, A., Venegas, R., Van Wichelen, K., Decoutere, S., & De Meyer, K. (2009). Optimization of external poly base sheet resistance in 0.13 µm quasi self-aligned SiGe:C HBTs. Thin Solid Films, 518 (6), 68. doi:10.1016/j.tsf.2009.10.058 |
Nguyen, N. D., Loo, R., & Caymax, M. (2008). Low-temperature epitaxy of highly-doped n-type Si at high growth rate by chemical vapor deposition for bipolar transistor application. Applied Surface Science, 264, 6072. doi:10.1016/j.apsusc.2008.02.194 |
Reiche, M., Moutanabbir, O., Himcinschi, C., Christiansen, S., Erfurth, E., Gösele, U., Mantl, S., Buca, D., Zhao, Q., Loo, R., Nguyen, N. D., Muster, F., & Petzold, M. (2008). Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation. ECS Transactions, 16, 211. doi:10.1149/1.2982883 |
Takeuchi, S., Nguyen, N. D., Leys, F., Loo, R., Conard, T., Vandervorst, W., & Caymax, M. (2008). Vapor phase doping with N-type dopant into silicon by atmospheric pressure chemical vapor deposition. ECS Transactions, 16, 495. doi:10.1149/1.2986806 |
Nguyen, N. D., Loo, R., Hikavyy, A., Van Daele, B., Ryan, P., Wormington, M., & Hopkins, J. (2007). In-line characterization of heterojunction bipolar transistor base layers by high-resolution x-ray diffraction. ECS Transactions, 10, 151. doi:10.1149/1.2773985 |
Nguyen, N. D., Schmeits, M., & Loebl, H.-P. (2007). Determination of charge carrier transport properties in organic devices by admittance spectroscopy : application to hole mobility in α-NPD. Physical Review. B, Condensed Matter, 75, 75307. doi:10.1103/PhysRevB.75.075307 |
Reiche, M., Himcinschi, C., Gösele, U., Christiansen, S., Mantl, S., Buca, D., Zhao, Q. T., Feste, S., Loo, R., Nguyen, N. D., Buchholtz, W., Wei, A., Horstmann, M., Feijoo, D., & Storck, P. (2007). Strained silicon-on-insulator - Fabrication and characterization. ECS Transactions, 6, 339. doi:10.1149/1.2728880 |
Nguyen, N. D., & Schmeits, M. (2006). Numerical simulation of impedance and admittance of OLEDs. Physica Status Solidi A. Applications and Materials Science, 203, 1901. doi:10.1002/pssa.200622014 |
Schmeits, M., & Nguyen, N. D. (2005). Small-signal characteristics of organic semiconductors with continuous energy distribution of traps. Physica Status Solidi A. Applications and Materials Science, 202 (2764). doi:10.1002/pssa.200521004 |
Nguyen, N. D., & Schmeits, M. (2002). The photorefractive effect at large modulation depth in semiconductors with multiple defect levels. Applied Physics. B, Lasers and Optics, 74, 35. doi:10.1007/s003400100764 |
Nguyen, N. D., Schmeits, M., Germain, M., Schineller, B., & Heuken, M. (2002). Electrical characterization of InGaN/GaN multiple-quantum-well structures by thermal admittance spectroscopy. Physica Status Solidi C. Current Topics in Solid State Physics, 288-292. doi:10.1002/pssc.200390045 |
Nguyen, N. D., Germain, M., Schmeits, M., Evrard, R., Schineller, B., & Heuken, M. (2001). Experimental and theoretical investigations of the electrical properties of undoped and magnesium-doped GaN layers. Journal of Crystal Growth, 230, 596. doi:10.1016/S0022-0248(01)01259-3 |
Nguyen, N. D., Germain, M., Schmeits, M., Schineller, B., & Heuken, M. (2001). Thermal admittance spectroscopy of Mg-doped GaN Schottky diodes. Journal of Applied Physics, 90, 985. doi:10.1063/1.1379345 |
Nguyen, N. D., Germain, M., Schmeits, M., Schineller, B., & Heuken, M. (2001). Investigation of defect levels in Mg-doped GaN Schottky structures by thermal admittance spectroscopy. Physica Status Solidi B. Basic Research, 228, 385. doi:10.1002/1521-3951(200111)228:2<385::AID-PSSB385>3.0.CO;2-6 |
Schmeits, M., Nguyen, N. D., & Germain, M. (2001). Competition between deep impurity and dopant behavior of Mg in GaN Schottky diodes. Journal of Applied Physics, 89, 1890. doi:10.1063/1.1339208 |
El Yacoubi, M., Evrard, R., Nguyen, N. D., & Schmeits, M. (2000). Electrical conduction by interface states in semiconductor heterojunctions. Semiconductor Science and Technology, 15, 341. doi:10.1088/0268-1242/15/4/307 |
Ratz, T., & Nguyen, N. D. (27 April 2022). Relevance of Ge incorporation on the physics of deep defects in kesterite materials [Paper presentation]. International Conference on Emerging Photovoltaic Materials and Technologies, Turkey. |
Baert, B., Nakatsuka, O., Zaima, S., & Nguyen, N. D. (2012). Impedance spectroscopy of GeSn/Ge heterostructures by a numerical method. In 222nd ECS Meeting, 2012. ECS. |
Waldron, N., Nguyen, N. D., Lin, D., Brammertz, G., Vincent, B., Firrincieli, A., Winderickx, G., Sioncke, S., De Jaeger, B., Wang, G., Mitard, J., Wang, W.-E., Heyns, M., Caymax, M., Meuris, M., Absil, P., & Hoffman, T. (2011). Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment. In 219th ECS Meeting (ECS). Pennington, United States: ECS. |
Nguyen, N. D., Wang, G., Waldron, N., Winderickx, G., Brammertz, G., Leys, M., Lismont, K., Dekoster, J., Loo, R., Meuris, M., Degroote, S., Caymax, M., Féron, O., Buttitta, F., O'Neil, B., Lindner, J., Schulte, F., Schineller, B., & Heuken, M. (2010). Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic applications. In 218th ECS Meeting, 2010. Pennington, United States: ECS. |
Van Huylenbroeck, S., Sibaja-Hernandez, A., Venegas, R., You, S., Winderickx, G., Radisic, D., Lee, W., Ong, P., Vandeweyer, T., Nguyen, N. D., De Meyer, K., & Decoutere, S. (2009). A 400GHz fMAX Fully Self-Aligned SiGe:C HBT Architecture. In IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009 (pp. 5-8). IEEE. doi:10.1109/BIPOL.2009.5314244 |
Reiche, M., Himcinschi, C., Gösele, U., Christiansen, S., Mantl, S., Buca, D., Zhao, Q. T., Feste, S., Loo, R., Nguyen, N. D., Buchholtz, W., Wei, A., Horstmann, M., Feijoo, D., & Storck, P. (2007). Strained silicon-on-insulator - Fabrication and characterization. In 211th ECS Meeting, 2007. Pennington, United States: ECS. |
Baret, A., Bardet Laetitia, Balty, F., Bellet, D., & Nguyen, N. D. (01 June 2023). Bridge percolation: electrical connectivity of discontinued conducting slabs by metallic nanowires [Poster presentation]. EMRS Spring meeting, Strasbourg, France. |
Ratz, T., Nguyen, N. D., Brammertz, G., Vermang, B., & Raty, J.-Y. (10 February 2022). Physics of Ge-related point defects in Sn-based, Ge-doped and Ge-alloyed kesterites [Poster presentation]. 12th European Kesterite Workshop, Copenhagen, Denmark. |
Ratz, T., Raty, J.-Y., Brammertz, G., Vermang, B., & Nguyen, N. D. (26 November 2020). Study of the opto-electronic properties of Cu2ZnXS4 (X=Sn,Ge,Si) kesterites as input data for solar cell efficiency modelling [Poster presentation]. 11th Kesterite Workshop, Oldenburg, Germany. |
Ratz, T., Brammertz, G., Caballero, R., Léon, M., Canulescu, S., Schou, J., Gütay, L., Devandra, P., Taskesen, T., Kim, D.-H., Kang, J.-K., Malerba, C., Redinger, A., Saucedo, E., Shin, B., Tampo, H., Timmo, K., Nguyen, N. D., & Vermang, B. (21 November 2019). History and prospects of the physical synthesis of kesterite for photovoltaic applications [Poster presentation]. Thomas Ratz, Uppsala, Sweden. |
Aghazadehchors, S., Nguyen, V., Lagrange, M., Khan, A., Sannicolo, T., Nguyen, N. D., Munoz-Rojas, D., & Bellet, D. (October 2016). Study of the effect of thin ALD oxide coatings on the stability of silver nanowire based transparent electrodes [Poster presentation]. 6th International Symposium on Transparent Conductive Materials, Platanias, Greece. |
Avelas Resende, J., Brochen, S., Bergerot, L., Jimenez, C., Nguyen, N. D., & Deschanvres, J.-L. (October 2016). Cation-doped Cu2O as a transparent p-type semiconducting oxide with enhanced performances: A comparison between strontium and magnesium incorporation [Paper presentation]. 6th International Symposium on Transparent Conductive Materials, Platanias, Greece. |
Sannicolo, T., Lagrange, M., Xian, S., Munos-Rojas, D., Jimenez, C., Bréchet, Y., Nguyen, N. D., & Bellet, D. (October 2016). Transparent electrodes based on silver nanowire networks: from fundamental aspects to integration into device [Paper presentation]. 6th International Symposium on Transparent Conductive Materials. |
Sannicolo, T., Lagrange, M., Xian, S., Munoz-Rojas, D., Moreau, S., Bréchet, Y., Nguyen, N. D., Celle, C., Simonato, J.-P., & Bellet, D. (September 2016). Flexible Transparent Electrodes based on Silver Nanowire Networks: Nanoscale Characterisation, Electrical Percolation, and Integration into Devices [Paper presentation]. 11th International Conference on Surface Coatings and Nanostructured Materials, Aveiro, Portugal. |
Avelas Resende, J., Nguyen, N. D., Deschanvres, J.-L., & Jimenez, C. (September 2015). Magnesium-doped Cuprous Oxide (Mg:Cu2O) thin films as a transparent p-type semiconductor oxide [Poster presentation]. 2015 E-MRS Fall Meeting and Exhibit, Warsaw, Poland. |
Nguyen, N. D. (May 2015). An atomic layer deposition approach to ultra-shallow doping of silicon [Paper presentation]. XXXVIII ENFMC Brazilian Physical Society Meeting. |
Baert, B., Cerica, D., Schmeits, M., & Nguyen, N. D. (13 November 2014). Electrical modelling of interface traps in GeSn MOS structures [Paper presentation]. JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration, Leuven, Belgium. |
Baert, B., Gupta, S., Gencarelli, F., Loo, R., Simoen, E., & Nguyen, N. D. (03 June 2014). Electrical characterization of pGeSn/nGe diodes [Paper presentation]. 7th International Silicon-Germanium Technology and Device Meeting (2014 ISTDM), Singapore. doi:10.1109/ISTDM.2014.6874640 |
Baert, B., & Nguyen, N. D. (June 2012). Numerical Simulation of the Electrical Characteristics of GeSn/Ge Semiconducting Heterostructures [Poster presentation]. "Jaszowiec" International School and Conference on the Physics of Semiconductors. |
Takeuchi, S., Nguyen, N. D., Leys, F., Loo, R., Conard, T., Vandervorst, W., & Caymax, M. (2008). Vapor phase doping: an atomic layer deposition approach to n-type doping in classical chemical vapor deposition epitaxy [Paper presentation]. 8th International Conference on Atomic Layer Deposition (ALD), Bruges, Belgium. |
Vandervorst, W., Eyben, P., Mody, J., Jurczak, M., Nguyen, N. D., Takeuchi, S., Leys, F., Loo, R., Caymax, M., & Everaert, J.-L. (2008). Conformal doping of FINFET's : a fabrication and metrology challenge [Paper presentation]. 17th International Conference in Ion Implantation Technology, Monterey, United States. |
Bellet, D., Papanastasiou, D., Resende, J., Nguyen, V. H., Jimenez, C., Nguyen, N. D., & Munoz-Rojas, D. (2019). Metallic nanowire percolating networks: from main properties to applications. In Nanosystems. London, United Kingdom: IntechOpen. doi:10.5772/intechopen.89281 |
Nguyen, N. D., & Hoebeke, M. (2002). Physique expérimentale préparatoire aux sciences biomédicales y compris l'introduction mathématique aux sciences expérimentales : Fascicule de travaux dirigés. (ULiège - Université de Liège, PHYS0111-2 Bases physiques et mathématiques des sciences biomédicales). |