References of "2017 International Symposium on Electromagnetic Compatibility - EMC EUROPE 2017, EMC Europe 2017"
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See detailModeling and design of an EMI-immune source-buffered miller OpAmp in 0.18 μm CMOS technology
Boyapati, S.; Redouté, Jean-Michel ULiege; Baghini, M. S.

in 2017 International Symposium on Electromagnetic Compatibility - EMC EUROPE 2017, EMC Europe 2017 (2017)

This paper presents the modeling and design of a source-buffered Miller operational amplifier structure that is highly immune to electromagnetic interference (EMI). The source-buffered Miller operational ... [more ▼]

This paper presents the modeling and design of a source-buffered Miller operational amplifier structure that is highly immune to electromagnetic interference (EMI). The source-buffered Miller operational amplifier is designed and fabricated in the 0.18 μm mixed-mode CMOS process and modeled mathematically including the body effect and channel length modulation. Measurement results show that the maximum EMI-induced input offset voltage for the source-buffered Miller operational amplifier is 22 mV at 1 GHz, when a 900 mVpp EMI signal is applied at its input. In contrast, the standard Miller operational amplifier generates an input offset voltage of 215 mV under the same operating conditions. © 2017 IEEE. [less ▲]

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See detailA robust CMOS Miller OpAmp with High EMI-immunity
Boyapati, S.; Redouté, Jean-Michel ULiege; Baghini, M. S.

in 2017 International Symposium on Electromagnetic Compatibility - EMC EUROPE 2017, EMC Europe 2017 (2017)

This paper presents a robust CMOS Miller operational amplifier (OpAmp) that has high immunity to electromagnetic interference (EMI). The proposed robust CMOS Miller operational amplifier uses the modified ... [more ▼]

This paper presents a robust CMOS Miller operational amplifier (OpAmp) that has high immunity to electromagnetic interference (EMI). The proposed robust CMOS Miller operational amplifier uses the modified replica Miller OpAmp concept with the source-buffered Miller OpAmp with source degeneration resistance in order to achieve high EMI immunity across a wide range of frequencies (10 MHz to 1 GHz). Simulation results show that the maximum EMI-induced input offset voltage for the proposed robust CMOS Miller OpAmp is less than 5mV over a wide range of frequencies (10 MHz to 1GHz) when a 1 Vpp EMI signal is injected into the non-inverting input. In contrast, the classic Miller OpAmp generates a maximum output offset voltage of 216 mV at 1GHz under the same operating conditions. © 2017 IEEE. [less ▲]

Detailed reference viewed: 10 (1 ULiège)