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See detailVapor phase doping: an atomic layer deposition approach to n-type doping in classical chemical vapor deposition epitaxy
Takeuchi, Shotaro; Nguyen, Ngoc Duy ULiege; Leys, Frederik et al

Conference (2008)

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See detailVapor phase doping with N-type dopant into silicon by atmospheric pressure chemical vapor deposition
Takeuchi, Shotaro; Nguyen, Ngoc Duy ULiege; Leys, Frederik et al

in ECS Transactions (2008), 16

Atomic layer doping of phosphorus (P) and arsenic (As) into Si was performed using the vapor phase doping (VPD) technique. For increasing deposition time and precursor gas flow rate, the P and As doses ... [more ▼]

Atomic layer doping of phosphorus (P) and arsenic (As) into Si was performed using the vapor phase doping (VPD) technique. For increasing deposition time and precursor gas flow rate, the P and As doses tend to saturate at about 0.8 and 1.0 monolayer of Si, respectively. Therefore, these processes are self-limited in both cases. When a Si cap layer is grown on the P-covered Si(001), high P concentration of 3.7 × 1020 cm-3 at the heterointerface in the Si- cap/P/Si-substrate layer stacks is achieved. Due to As desorption and segregation toward the Si surface during the temperature ramp up and during the Si-cap growth, the As concentration at the heterointerface in the Si-cap/As/Si-substrate layer stacks was lower compared to the P case. These results allowed us to evaluate the feasibility of the VPD process to fabricate precisely controlled doping profiles. [less ▲]

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See detailAtomic layer doping of phosphorus and arsenic: experimental and atomistic modeling
Takeuchi, Shotaro; Yang, Lijun; Nguyen, Ngoc Duy ULiege et al

Poster (2008)

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See detailVapor phase doping with N-type dopant into silicon by atmospheric pressure chemical vapor deposition
Takeuchi, Shotaro; Nguyen, Ngoc Duy ULiege; Leys, Frederik et al

in 214th ECS Meeting, 2008 (2008)

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